agilent hcpl-817 phototransistor optocoupler high density mounting type data sheet features current transfer ratio (ctr: min. 50% at i f = 5 ma, v ce = 5 v) high input-output isolation voltage (v iso = 5000 vrms) response time (t r : typ., 4 s at v ce = 2 v, i c = 2 ma, r l = 100 ? ) compact dual-in-line package ul approved csa approved iec/en/din en 60747-5-2 approved options available: leads with 0.4" (10.16 mm) spacing (w00) leads bends for surface mounting (300) tape and reel for smd (500) iec/en/din en 60747-5-2 approvals (060) applications signal transmission between circuits of different potentials and impedances i/o interfaces for computers feedback circuit in power supply description the hcpl-817 contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin dip package and available in wide-lead spacing option and lead bend smd option. input-output isolation voltage is 5000 vrms. response time, t r , is typically 4 s and minimum ctr is 50% at input current of 5 ma. functional diagram ordering information specify part number followed by option number (if desired). hcpl-817-xxxe lead free option number 000 = no options 060 = iec/en/din en 60747-5-2 option w00 = 0.4" lead spacing option 300 = lead bend smd option 500 = tape and reel packaging option 00a = rank mark a 00b = rank mark b 00c = rank mark c 00d = rank mark d 00l = rank mark l schematic 4 3 12 pin no. and internal connection diagram 1. anode 2. cathode 3. emitter 4. collector 1 2 anode cathode v f + i f 4 3 collector emitter i c caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd.
2 package outline drawings HCPL-817-000E hcpl-817-w00e hcpl-817-060e 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 2.8 0.5 (0.110) 3.3 0.5 (0.130) 0.5 0.1 (0.02) 0.5 (0.02) typ. a 817v yww date code *1 rank *2 lead free anode 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 2.8 0.5 (0.110) 3.3 0.5 (0.130) 0.5 0.1 (0.02) 0.5 (0.02) typ. a 817 yww date code *1 rank *2 lead free anode 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 6.9 0.5 (0.272) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.5 (0.4) 2.8 0.5 (0.110) 2.3 0.5 (0.09) 0.5 0.1 (0.02) a 817 yww date code *1 rank *2 lead free anode
3 hcpl-817-300e solder reflow temperature profile 1) one-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of (1) above. 30 seconds 60 ~ 150 sec 90 sec 60 sec 60 sec 25 c 150 c 200 c 250 c 260 c (peak temperature) 217 c time (sec) tem perature ( c) absolute maximum ratings (t a = 25 ? c) storage temperature, t s ?5?c to +125?c operating temperature, t a ?0?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 50 ma reverse input voltage, v r 6 v input power dissipation, p i 70 mw collector current, i c 50 ma collector-emitter voltage, v ceo 35 v emitter-collector voltage, v eco 6 v collector power dissipation 150 mw total power dissipation 200 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 5000 vrms 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.3 (0.4) 1.2 0.1 (0.047) 0.35 0.25 (0.014) 1.0 0.25 (0.039) a 817 yww date code *1 rank *2 lead free anode
4 figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. collector-emitter saturation voltage vs. forward current. i f forward current ma 0 t a ambient temperature c 75 125 50 25 10 40 0 50 100 -30 60 30 20 p c collector power dissipation mw 0 t a ambient temperature c 100 50 200 150 75 125 25 0 50 100 -30 0 i f forward current ma 14 20 2 6 0 1 3 4 5 6 v ce(sat.) collector-emitter saturation voltage v t a = 25 c i c = 0.5 ma i c = 1 ma i c = 3 ma i c = 6 ma i c = 7 ma 24 81012 1618 * ctr = x 100% i c i f rank mark ctr (%) conditions l 50 ~ 100 i f = 5 ma, v ce = 5 v, t a = 25 c a 80 ~ 160 b 130 ~ 260 c 200 ~ 400 d 300 ~ 600 electrical specifications (t a = 25 ? c) parameter symbol min. typ. max. units test conditions forward voltage v f ?.21.4vi f = 20 ma reverse current i r 10 av r = 4 v terminal capacitance c t 30 250 pf v = 0, f = 1 khz collector dark current i ceo 100 na v ce = 20 v collector-emitter breakdown voltage bv ceo 35vi c = 0.1 ma emitter-collector breakdown voltage bv eco 6vi e = 10 a collector current i c 2.5 30 ma i f = 5 ma, v ce = 5 v, *current transfer ratio ctr 50 600 % r be = collector-emitter saturation voltage v ce(sat) ?.10.2vi f = 20 ma, i c = 1 ma response time (rise) t r ?18 sv cc = 2 v, i c = 2 ma response time (fall) t f ?18 sr l = 100 ? cut-off frequency f c 80 khz v cc = 5 v, i c = 2 ma r l = 100 ? , ? db isolation resistance r iso 5 x 10 10 1 x 10 11 ? dc 500 v 40 ~ 60% r.h. floating capacitance c f 0.6 1.0 pf v = 0, f = 1 mhz
5 figure 4. forward current vs. forward voltage. figure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector- emitter voltage. figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperature. figure 9. collector dark current vs. temperature. i c collector current ma 0 v ce collector-emitter voltage v 69 40 20 50 3 0 p c (max.) t a = 25 c i f = 30 ma i f = 20 ma i f = 10 ma i f = 5 ma 30 10 i f = 20 ma i f = 10 ma 12 45 78 relative current transfer ratio % 0 100 50 150 v ce = 5 v i f = 5 ma t a ambient temperature c 75 25 0 50 100 -30 v ce(sat.) collector-emitter saturation voltage v 0 0.10 0.02 0.16 i c = 1 ma i f = 20 ma t a ambient temperature c 75 25 0 50 100 -25 0.04 0.06 0.08 0.12 0.14 i ceo collector dark current a t a ambient temperature c v ce = 20 v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 75 25 0 50 100 -25 10 -5 i f forward current ma 1 v f forward voltage v 2.0 3.0 10 5 500 1.0 0 t a = 75 c 0.5 1.5 2.5 2 20 50 100 200 t a = 50 c t a = 25 c t a = 0 c t a = -25 c 0 i f forward current ma 10 50 40 200 2 1 20 60 120 140 160 ctr current transfer ratio % v ce = 5 v t a = 25 c 80 100 180 520 figure 10. response time vs. load resistance. figure 11. frequency response. response time s 0.1 r l load resistance k ? 0.1 5 1 0.5 0.2 0.5 500 0.2 2 10 0.05 2 v ce = 2 v i c = 2 ma t a = 25 c tf tr 1 5 10 20 50 100 200 ts td voltage gain av db f frequency khz 1 20 500 5 20 10 21050 0.5 0 100 200 r l = 10 k ? r l = 1 k ? r l = 100 ? v ce = 2 v i c = 2 ma t a = 25 c
test circuit for response time test circuit for frequency response v cc r d r l output ~ v cc r d input r l output input output 10% 90% td tr tf ts www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ?2004 agilent technologies, inc. obsoletes 5989-0293en october 27, 2004 5989-1734en
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